Theoretical Investigation of Strain-Adjustable Ge0.92Sn0.08 Light-Emitting Diodes With Giant Magnetostrictive Stressor for Short-Wave Infrared Light Source

A new idea was provided by the group-IV GeSn sombrero de los 2 carnales alloys for short-wave infrared light source compatible with CMOS due to the low cost integrated on the Si platform and can be transformed into direct bandgap alloy.More than 7.1% Sn content or strain engineering is used to achieve the direct bandgap GeSn semiconductors a

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